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 SEH IG NANATM (Nitrogen Doping + Annealing)
Overview
In today's advanced device applications, near surface defects such as COP's and oxygen precipitates have caused degraded device yield and performance. It has been common practice to form bulk micro defects during device processing by carefully structuring device thermal processes around material bulk micro defect formation primarily through oxygen precipitation. However, with the present day's movement toward lower thermal budgets it is more costly to do so.
SEH IG NANATM (Nitrogen Assisted Nucleate Acceleration) material provides the best starting material for those applications that benefit from a defect free near surface and a high density of bulk micro defects to provide high intrinsic gettering efficiency from initial oxidation through device completion. IG NANATM can provide cost benefits through yield enhancement and process simplification. IG NANATM is produced at SEH's Japanese and Vancouver facilities. Available diameters are 150mm - 300mm.
Features
- Near surface defects (COP's and Oxygen precipitate) <= 30 /cm2
- Superior GOI
- Denuded zone tailored to specific application.
- Bulk Micro Defects (BMD) >= 1e9/cm3 uniform edge to edge
- Low slip level
Benefits
IG NANATM has provided our customers a more robust device process resulting in increased device yields and lowered manufacturing costs. IG NANATM is one of SEH's most popular products with further growth being seen in sub .18um technologies including Flash memory, DRAMs, M/ROMS, SRAMS, and other logic devices.
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| Bulk Gettering Effect |
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| Surface Defect Comparison |
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